Spintronic devices with integrated transistors

ABSTRACT

The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated Giant-Magneto-resistive (GMR) structures. The present teachings relates to integrated latch memory and logic devices and, in particular, concerns a spin dependent logic device that may be integrated with conventional semiconductor-based logic devices to construct high-speed non-volatile static random access memory (SRAM) cells.

RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.13/193,523, filed Jul. 28, 2011, now U.S. Patent No. 8,164,948, issuedApr. 24, 2012, which is a divisional of U.S. patent application Ser. No.12/017,308, filed Jan. 21, 2008 (now U.S. Patent No. 8,004,882, issuedAug. 23, 2011), which is a continuation of U.S. patent application Ser.No. 11/146,997, filed Jun. 6, 2005 (now U.S. Patent No. 7,339,818,issued Mar. 4, 2008) which claims the benefit under 35 U.S.C. §119(e) ofU.S. Provisional Application No. 60/577,091, filed Jun. 4, 2004, thedisclosures of each of which are hereby incorporated by reference intheir entireties.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to semiconductor processing technologyand, in particular, concerns a spin dependent logic device that may beused to construct high-speed non-volatile static random access memory(SRAM) cells.

2. Description of the Related Art

Since the introduction of the digital computer, electronic storagedevices have been a vital resource for the retention of binary data.Some conventional semiconductor electronic storage devices utilizestatic latch structures as storage cells, which may be referred to asStatic Random Access Memory (SRAM). As is generally known in the art, aconventional SRAM latch circuit utilizes complementary metal-oxidesemiconductor (CMOS) circuitry. In one aspect, CMOS SRAM circuitrytypically comprises two cross-coupled inverters, wherein thesimultaneous activation of two access transistors regulates the flow ofcurrent through the cross-coupled inverter circuits for read and writefunctions. The inverter circuit is a fundamental CMOS circuit utilizedin many memory and logic devices, such as SRAM memory, set-reset (SR)flip-flops, and various logic gates. In one aspect, a common CMOSinverter circuit comprises two series connected (drain-to-drain) andmatched enhancement type metal-oxide semiconductor field-effecttransistor (MOSFET) devices: one n-channel MOSFET and one p-channelMOSFET. Furthermore, the input to the inverter circuit is connected tothe gate of each MOSFET device, and the output of the inverter circuitis accessed between the two MOSFET devices at the drain-to-drainconnection.

SRAM devices experience fast access times, which makes SRAM a desirablememory storage device. Unfortunately, this type of semiconductor RandomAccess Memory (RAM) requires a continuous supply of power to maintain orpreserve a defined logic-state. As a result, conventional SRAM isconsidered volatile memory due to the fact that data may be lost withthe loss of a continuous supply of power.

Alternatively, Programmable Read Only Memory (PROM) devices, such asErasable PROM (EPROM) and Electrically Erasable PROM (EEPROM), may beused as non-volatile memory devices in place of SRAM devices. PROMdevices are user-modifiable read-only memory (ROM) devices that may berepeatedly erased and reprogrammed. EPROM devices are typically erasedby shining an intense ultraviolet light on the circuitry of the memorychip and then reprogrammed in a generally known manner using electricalvoltage. Unfortunately, EPROM devices need to be placed in a speciallydesigned device for erasure and programming prior to re-write, which issubstantially inconvenient under most circumstances. Unlike EPROM chips,EEPROMs do not need to be placed in a specially designed device forerasure and programming for re-write. Unfortunately, an EEPROM chiptypically requires erasure and re-programming in its entirety and in anon-selective manner, which takes a considerable amount of time. Inaddition, EEPROM devices have limited re-programmability over the lifeof the device, which, in most cases, re-programmability is limited totens or hundreds of thousands of times. Other disadvantages to PROMdevices include slow read and write times, which may be substantiallyslower than SRAM devices. Therefore, conventional PROM devices are nottypically used as non-volatile random access memory.

Based on the foregoing, there currently exists a need to replacetraditional volatile SRAM with an improved solid-state non-volatilememory device that has the speed of conventional SRAM with the logicstate preservation of PROM devices. Furthermore, there also exists aneed to develop non-volatile memory devices that may be used inconventional applications while still maintaining a high-densityfabrication process and technique.

SUMMARY OF THE INVENTION

The aforementioned needs may be satisfied by a memory device comprising,in one embodiment, a semiconductor substrate having a first surface andat least one integrated latch memory component formed on the firstsurface of the semiconductor substrate, wherein the at least oneintegrated latch memory component stores a selective logic state havinga volatile memory status. In addition, the memory device may furthercomprise at least one spin dependent logic device formed on thesemiconductor substrate, wherein the at least one spin dependent logicdevice is interconnected to the at least one integrated latch memorycomponent so as to permit a non-volatile application to the selectivelogic state having a volatile memory status.

In one aspect, the memory device may comprise a static random accessmemory (SRAM) device. The integrated latch memory component may compriseat least one inverter circuit, wherein the at least one inverter circuitmay utilize complementary metal-oxide semiconductor (CMOS) technology.The selective logic state may comprise a binary logic state. Thevolatile memory status may be defined as an unstable data retentionstatus that is power dependent. The non-volatile memory status may bedefined as a stable data retention status that is power independent.

In another aspect, the at least one spin dependent logic device mayutilize a selectable resistance differential to store the selectivelogic state. The at least one spin dependent logic device may comprise agiant magneto-resistance (GMR) device, wherein the GMR device maycomprise a device having a first pinned layer of a magnetic materialthat is magnetized in a first fixed direction and a second layer ofmagnetic material that may be magnetized in either the first fixeddirection or a second direction. In addition, the first pinned layer maycomprise a magnetic material selected from the group consisting ofNiFeCo, NiFe, CoFe, Cu, Co, Ni, Fe, and Ta. Also, the second layer maycomprise a magnetic material selected from the group consisting ofNiFeCo, NiFe, CoFe, Cu, Co, Ni, Fe, and Ta.

The aforementioned needs may also be satisfied by an SRAM device formedon a semiconductor substrate. In one embodiment, the SRAM device maycomprise a plurality of MOSFET devices formed on a first surface of thesemiconductor substrate, wherein the plurality of MOSFET devices arelogically interconnected so as to store a logic state with a volatilestatus. In addition, the memory device may further comprise at least onespin dependent logic device formed on the first surface of thesemiconductor substrate, wherein the at least one spin dependent logicdevice is electrically interconnected to the plurality of MOSFET devicesso as to provide a non-volatile operation of the SRAM device, whereinthe logic state is stored with a non-volatile logic status.

The aforementioned needs may also be satisfied by a static memory deviceformed on a semiconductor substrate. In one embodiment, the staticmemory device may comprise a plurality of solid state components formedon the semiconductor substrate and logically interconnected totemporarily store a logic state having a power dependent storage status.In addition the static memory device may further comprise at least oneintegrated magneto-resistive component formed on the first surface ofthe semiconductor substrate and electrically interconnected to theplurality of solid state components, wherein the at least one integratedmagnetic component provides a non-volatile storage status to the logicstate.

The aforementioned needs may also be satisfied by an integrated memorydevice comprising, in one embodiment, a volatile memory componentlogically configured to temporarily store a selective logic state and anon-volatile memory component integrated with the volatile memorycomponent to independently store the selective logic state as a measuredresistance differential across the non-volatile memory component in amanner so as to prevent the loss of the selective logic state during apower interrupt.

The aforementioned needs may also be satisfied by a method forpreserving a selective logic state with a power dependent status. In oneembodiment, the method may comprise logically interconnecting aplurality of MOSFET devices on a first surface of a semiconductorsubstrate to temporarily store a selective logic state with a powerdependent status. In addition, the method may further compriseintegrating at least one magneto-resistive device with the plurality ofMOSFET devices to independently store the selective logic state in amanner so as to prevent the loss of the selective logic state during apower interruption. These and other objects and advantages of thepresent teachings will become more fully apparent from the followingdescription taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other aspects, advantages, and novel features of the inventionwill become apparent upon reading the following detailed description andupon reference to the accompanying drawings. In the drawings, sameelements have the same reference numerals in which:

FIG. 1A illustrates one embodiment of an inverter circuit with amagneto-resistive contact (MRC) interposedly coupled in series betweentwo complementary transistors.

FIG. 1B illustrates another embodiment of an inverter circuit having twomagneto-resistive contacts coupled in series with two complementarytransistors.

FIG. 1C illustrates still another embodiment of an inverter circuithaving two magneto-resistive contacts coupled in series with twocomplementary transistors.

FIG. 1D illustrates yet another embodiment of an inverter circuit with amagneto-resistive contact and a proximate conductor interposedly coupledin series between two complementary transistors.

FIG. 2A illustrates a cross-sectional view of one embodiment of amagneto-resistive contact.

FIG. 2B illustrates a perspective view of the MRC in FIG. 2A.

FIG. 2C illustrates a cross-sectional view of another embodiment of amagneto-resistive contact.

FIG. 2D illustrates a perspective view of the MRC in FIG. 2C.

FIG. 3 illustrates one embodiment of an MRC array.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Reference will now be made to the drawings wherein like numerals referto like parts throughout. FIG. 1A illustrates one embodiment of aninverter circuit 100 with a magneto-resistive component or contact (MRC)102 interposedly coupled in series between two complementary transistors104, 106. In one aspect, the inverter circuit 100 may be utilized in anSRAM latch structure, such that the inverter circuit 100 utilizescomplementary metal-oxide semiconductor (CMOS) technology, wherein afirst transistor 104 is a p-channel MOSFET, and a second transistor 106is an n-channel MOSFET. Solid state semiconductor devices, such asp-channel and n-channel MOSFET devices, may be implemented into circuitsthat are designed for digital logic and memory functions.

Additionally, the source terminal of the first transistor 104 isconnected to a voltage source (Vs) 110, and the drain terminal of thefirst transistor 104 is connected to the upper terminal of the MRC 102.In addition, the lower terminal of the MRC 102 is connected to the drainterminal of the second transistor 106, and the source terminal of thesecond transistor 106 is connected to a common ground terminal 112.Moreover, an input terminal 114 of the inverter circuit 100 is connectedto the gate terminals of the first and second transistors 104, 106, andan output terminal 116 of the inverter circuit 100 is connected to thedrain terminal of the first transistor 104 and the upper terminal of theMRC 102.

In one embodiment, the MRC 102 comprises a Giant-Magneto-Resistive (GMR)stacked structure that may be selectively programmed with the spintroniceffect to a state of high resistance or to a state of low resistance.Advantageously, GMR devices employ a developing technology that offersthe advantages of improved non-volatility and high-density fabrication.In addition, GMR structures utilize the spin polarization effect ofelectrons within ferromagnetic material and utilize multi-layers offerromagnetic materials and a physical property known asmagneto-resistance to read the memory storage logic states.

Binary logic states may require the sensing of a resistance differentialto distinguish between “on” and “off” states. As is generally known,resistance is a measure of the inability of an electrical current toflow through a specific material, whereas current is the actual flow ofelectrons through a material. Therefore, if a material has a highresistance, then the ability of electrons to flow through the materialmay be inhibited. Conversely, a low resistive material tends to allow ahigher degree of current to flow. GMR structures take advantage of thisvariable resistance concept by manipulating the alignments of spinstates within multiple layers of magnetic material with proximatemagnetic fields to increase or decrease the resistance between themultiple layers.

For example, current flow through a proximate conductive trace induces amagnetic field. In the presence of an orthogonal external magneticfield, the spin direction of stationary GMR electrons may be altered inone of two directions, either “up spin,” parallel to the magnetic field,or “down spin,” anti-parallel to the magnetic field. Thus, the spinorientation of the affected electrons are either directed “up” or “down”reaffirming the directional spin status of the electron or electronswithin the concurrent external magnetic fields.

Moreover, magnetic GMR layers include a pinned (spin stationary) layerand a soft (spin programmable) layer. The selective programmability ofthe soft layer enables the GMR structure to serve as a logic statedevice, which stores binary data as directions of net magnetizationvectors. In one aspect, current flow through two orthogonal conductivetraces polarizes the spin characteristics of the electrons within thesoft layer in either a parallel or antiparallel direction. In oneaspect, the polarized spin of the soft layer electrons may be alteredwhen influenced by two magnetic fields that are orthogonal to eachother.

For example, if the individual magnetic layers are magnetized in thesame direction (parallel), the structure exhibits a low electricalresistance. Whereas, if the individual magnetic layers are magnetized inopposite directions (anti-parallel), the structure exhibits a highelectrical resistance. The “up” or “down” spin of the electrons arebelieved to interact with the net magnetization of the layered materialsto either facilitate or impede the flow of electrons influenced by anapplied electric field. When the layers are magnetically aligned inparallel, either the “up” or “down” electrons may travel through themagnetic material with a reduced electron scattering effect resulting inan overall lower resistance. However, in the case where layers areoppositely magnetized, both “up” and “down” electrons will be scatteredby the anti-parallel orientation of the layers and, as a result, ahigher percentage of electrons encounter a greater scattering effectcorresponding to an overall higher resistance.

In one aspect, the spintronic effect utilizes the net spin-polarizationof electrons in a magnetic material, such as Co, Fe, Ni, or anycombinational alloy thereof, to produce a variable resistancedifferential across the material. The binary logic states typicallyrequire the sensing of a resistance differential between the upper andlower terminals of the MRC device 102 to distinguish between “on” and“off” states. As previously described, the sensing of a high resistivestate may represent the “on” state, and the sensing of a low resistivestate may represent an “off” state. Without departing from the scope ofthe present teachings, it should be appreciated that the converse may betrue depending on the specific application of the device. In addition,the non-volatile programming of the GMR stacked structure addssignificant advantage to an SRAM memory cell in that the MRC 102 retainsthe binary state through power-down, reset, and power-up of the SRAMmemory cell. The structure and functionality of the MRC 102 will bediscussed in greater detail herein below in FIG. 2.

For explanative purposes, a high input at the gate terminal of a MOSFETrefers to a voltage that is capable of inducing an n-channel MOSFET intoan operational state and reducing a p-channel MOSFET into anon-operational state. Conversely, a low input at the gate terminal of aMOSFET refers to a voltage that is capable of reducing an n-channelMOSFET into a non-operational state and inducing a p-channel MOSFET intoan operational state.

In one embodiment, the inverter circuit 100 operates as follows. When alow input appears at the input terminal 114 of the inverter circuit 100,the low input is transferred to the gate terminals of the transistors104, 106. The low input at the gate terminal of the first transistor 104induces the p-channel into an operational state and allows current toflow from the source terminal to the drain terminal of the firsttransistor 104. Conversely, the low input at the gate terminal of thesecond transistor 104 induces the n-channel into a non-operational stateand prevents current flow between the drain terminal and the sourceterminal of the second transistor 106. Therefore, the potential at theoutput terminal 116 is substantially similar to the potential at thevoltage source 110. Since the output voltage at the output terminal 116is high, the MRC 102 is programmed to a high resistive state to allowcurrent to source through the first transistor 104 from the voltagesource 110 to the output terminal 116. Advantageously, high resistanceat the position of the MRC 102 would source the current from the drainterminal of the first transistor 104 to the output terminal 116 of theinverter circuit 100. In a power-down, reset, and power-up sequence, thehigh resistive state of the MRC 102 would not change due to thenon-volatility of GMR stacked structures. Therefore, at power-up, theinverter circuit 100 would sense the high resistive state of the MRC 102and produce a high output voltage at the output terminal 116 of theinverter circuit 100.

Alternatively, when a high input appears at the input terminal 114 ofthe inverter circuit 100, the potential at the output terminal 116 issubstantially similar to the potential at the ground terminal 112. Thehigh input also appears on the gate terminals of the first and secondtransistors 104, 106 rendering the first transistor 104 to anon-operational state and the second transistor 106 to an operationalstate. Since the output voltage at the output terminal 116 is low, theMRC 102 is programmed to a low resistive state to allow current to sinkthrough the second transistor 106 from the output terminal 116 to theground terminal 112. Advantageously, a low resistance differentialacross the MRC 102 would sink enough current from the output terminal116 to provide a low output. In a power-down, reset, and power-upsequence, the low resistive state of the MRC 102 would not change due tothe non-volatility of GMR stacked structures. Therefore, at power-up,the inverter circuit 100 would sense the low resistive state of the MRC102 and produce a low output voltage at the output terminal 116 of theinverter circuit 100.

In one aspect, integrated magneto-resistive devices, such as the MRC102, may be utilized as direct interconnects, selectable loads, and/orvariable resistors, where the direct connection of magneto-resistivecomponents to one or more semiconductor-based transistors is oneadvantageous feature. Copper (Cu) may be utilized as an interconnect ifnecessary for increased electron transfers at the point of contact. Inaddition, integrated magneto-resistive devices may function ascurrent-perpendicular-to-the-plane (CPP) devices or current-in-plane(CIP) devices such that the dimensions of the integratedmagneto-resistive devices are electrically configured to accommodatecurrent flow and/or needed resistance differentials across the devices.It should be appreciated that, depending on the application of the MRC,the CCP or CIP configuration may be used by one skilled in the artwithout departing from the scope of the present teachings.

Additionally, the MRC may be switched by the magnetic field applied by aproximate conductor, or the MRC may be switched by injected current thatuses the spin polarization effect that is concerned with the interactionof the spin of electrons and the magnetization. Applications of thedevice shown in FIGS. 1A-1D include a portion of a latch circuitelement, a portion of a memory cell, and a portion of an embedded memorycell. Moreover, the MRC provides a contact between the transistor andone or more device layer(s), while also providing selectablemagnetoresistance. The MRC, therefore, provides a contact that isintegrated with a magnetic element. The MRC is, therefore, much smallerthan a separate magnetoresistive element with a separate contact.

In one aspect, the integrated magneto-resistive devices may alsofunction as memory or logic devices depending on latching, gain, orthreshold properties of the device. In one aspect, the magneto-resistivecomponent may be probed optically to access the magneto-resistive stateof the device, for example, with the generally known Kerr effect.Moreover, the magneto-resistive component may also be thermographicallyaccessed for writing and reading functions. One embodiment andapplication includes a non-volatile SRAM device such that themagneto-resistive device maintains the high-speed access times and thehigh density fabrication of conventional volatile SRAM, but achieves lowpower consumption with zero cut-off. Furthermore, the structure,composition, and functionality of the integrated magneto-resistivedevices will be discussed in greater detail herein below.

FIG. 1B illustrates another embodiment of an inverter circuit 130comprising two magneto-resistive contacts (MRC) 132 a, 132 b coupled inseries with two complementary transistors 134, 136. Similar to theinverter circuit 100 disclosed in FIG. 1A, the inverter circuit 130utilizes CMOS technology, wherein a first transistor 134 is a p-channelMOSFET, and a second transistor 136 is an n-channel MOSFET. The sourceterminal of the first transistor 134 is connected to the lower terminalof a first MRC 132 a, and the drain terminal of the first transistor 134is connected to the drain terminal of the second transistor 136. Theupper terminal of the first MRC 132 a is connected to a voltage source(Vs) 140. Furthermore, the source terminal of the second transistor 136is connected to the upper terminal of the second MRC 132 b, and thelower terminal of the second MRC 132 b is connected to a common groundterminal 142. Also, an input terminal 144 of the inverter circuit 130 isconnected to the gate terminals of the first and second transistors 134,136, and an output terminal 146 of the inverter circuit 100 is connectedto the drain terminals of the first and second transistors 134, 136.

In this embodiment, when a low input appears at the input terminal 144of the inverter circuit 130, a high output appears at the outputterminal 146 of the inverter circuit 130. Therefore, the first MRC 132 ais programmed to a low resistive state, and the second MRC 132 b isprogrammed to a high resistive state. Advantageously, these programmedlogic states significantly ensure that, at power-up, the invertercircuit 100 would sense the low resistive state of the first MRC 132 aand the high resistive state of the second MRC 132 b and produce a lowoutput voltage at the output terminal 116 of the inverter circuit 100.Conversely, the appearance of a high input at the input terminal 144would produce a low input at the output terminal 146. As a result, thefirst MRC 132 a is programmed to a high resistive state, and the secondMRC 132 b is programmed to a low resistive state. Retaining the binarylogic states during a power-down, reset, and power-up sequence issignificantly fundamental to the concept of non-volatility such that theinverter circuit 100 would be capable of sensing the most recent binarylogic state stored in the integrated magneto-resistive devices, such asMRC devices 144, 146.

FIG. 1C illustrates still another embodiment of an inverter circuit 160comprising two magneto-resistive contacts (MRC) 162 a, 162 b coupled inseries with two complementary transistors 134, 136. In this embodiment,the configuration of the inverter circuit 160 is similar to theconfiguration of the inverter circuit 130 in FIG. 1B except that thesecond MRC 132 b is positioned above the second transistor 136. Thesecond MRC 166 is positioned within the inverter circuit 160 such thatthe upper terminal of the MRC is connected to the drain terminal of thefirst transistor 134, and the lower terminal of the second MRC 132 b isconnected to the drain terminal of the second transistor 136. Inaddition, the source terminal of the second transistor 136 is connectedto the ground terminal 142. Furthermore, the functionality of theinverter circuit 160 is similar in scope to the functionality of theinverter circuit 130 in FIG. 1B.

The embodiments of integrated magneto-resistive devices described hereinare transistors integrated with one or more magneto-resistive contacts(MRCs) that provide electrical connectivity (for example, to connect topower, ground, and/or other circuits) and selectable change inresistance. The basic structure of the MRC device, which includes atransistor, such as a silicon-on-insulator or bulk CMOS transistor, anda single MRC is shown in FIGS. 2A-2D. In one aspect, the MRC device maybe switched by a magnetic field applied by a proximate conductor, or theMRC device may be switched by injected current that uses the spinpolarization effect to manipulate the magnetization of ferromagneticlayers. As previously described, applications of the MRC device includea portion of a latch circuit element, a portion of a memory cell, and aportion of an embedded memory cell, where, in one aspect, the MRC deviceprovides a selectable magneto-resistive contact between a plurality oftransistors. Furthermore, an integrated MRC device provides anintegrated contact between magnetic-based circuit elements andsemiconductor-based circuit elements. As will be described in greaterdetail herein below, an integrated MRC device is substantially smallerin geometry than a discrete magneto-resistive circuit element withseparate conductive contacts. Advantageously, the reduced geometry ofthe MRC device allows for the utilization of desirable dense fabricationand manufacturing techniques.

FIG. 1D illustrates one embodiment of an inverter circuit 190 with amagneto-resistive contact (MRC) 102 and a proximate conductor 192interposedly coupled in series between two complementary transistors104, 106. In this embodiment, the configuration of the inverter circuit190 is similar in scope to the configuration of the inverter circuit 100in FIG. 1A with the addition of the proximate conductor 192.Advantageously, the proximate conductor 192 may be utilized to switchthe net magnetization vector of the MRC 102 from a parallel spinorientation to an anti-parallel spin orientation or vice versa dependingon the direction of the current flow through the proximate conductor192. Additionally, the functionality of the MRC 102 and the process ofswitching the MRC 102 will be discussed in greater detail herein below.As shown in FIG. 1D, the MRC 102 may subject to one or more inducedmagnetic fields from the proximate conductor 192 that may be positionedadjacent to the MRC 102. It should be appreciated that one or moreproximate conductors 192 may be formed and/or positioned adjacent to oneor more MRC 102 devices for the purpose of inducing one or more in-planemagnetic fields and/or perpendicular magnetic fields without departingfrom the scope of the present teachings.

FIG. 2A illustrates a cross-sectional view of one embodiment of amagneto-resistive contact (MRC) 200. FIG. 2B illustrates a perspectiveview of the MRC 200 in FIG. 2A, wherein like numerals within FIGS. 2Aand 2B correspond to like parts throughout. The MRC 200 is formed on anupper surface of a semiconductor based substrate 202. In one aspect, thesemiconductor substrate 202 is manufactured in a manner well known inthe art with a substantially flat, smooth, non-rigid upper surface.Semiconductor refers to, but is not limited by, a material such asSilicon, Germanium, or Gallium Arsenide. In addition, the MRC 200comprises a plurality of conductive traces 204 a, 204 b, 204 c, 204 d, aplurality of insulation layers 206 a, 206 b, and a first GMR stackedstructure 201 including a magnetically fixed pinned layer 208, a spacerlayer 210, and a magnetically programmable soft layer 212.

In one embodiment, a first conductive trace 204 a is formed adjacent tothe upper surface of the substrate 202. It should be appreciated thatthe plurality of conductive traces 204 a, 204 b, 204 c, 204 d are formedof a conductive material, such as aluminum, copper, an aluminum/copperalloy, or doped polysilicon, which is deposited by vacuum evaporation,sputter-deposition, or chemical vapor deposition (CVD) techniques in amanner generally known in the art. In addition, the plurality ofconductive traces 204 a, 204 b, 204 c, 204 d may comprise thin, flat,conductive interconnects. It should also be appreciated that theconductive traces 204 a, 204 b, 204 c, 204 d can vary dimensionally,including length, width, height, and thickness, depending on theimplementation and desirable electrical characteristics withoutdeparting from the scope of the present teachings. In one aspect, thefirst conductive trace 204 a comprises a first point of reference forprogramming the net magnetization vector of the magneticallyprogrammable soft layer 212, wherein the first conductive trace 204 aprovides a first magnetic field in a first direction relative to the GMRstacked structure 201.

In one embodiment, a first insulation layer 206 a is formed adjacent tothe upper surface of the first conductive trace 204 a. It should beappreciated that the plurality of insulation layers 206 a, 206 b areformed of a silicon-based material, such as silicon-dioxide (SiO₂) or asilicon-nitride (SiN_(x)). Additionally, the insulation layers 206 a,206 b may function as a current flow barrier between conductive traces.In one aspect, a second conductive trace 204 a may be formed adjacent tothe upper surface of the first insulation layer 206 a. In thisembodiment, the second conductive trace 204 b is positionedsubstantially parallel to the first conductive trace 204 a. It should beappreciated that the second conductive trace 204 b may be oriented in adirection other than parallel without departing from the scope of thepresent teachings. Also, the second conductive trace 204 b may functionas a lower conductive contact for the GMR stacked structure 201, whereinthe GMR structure 201 may be interconnected to other circuit elements ina manner as will be described in greater detail herein below.

In one embodiment, the magnetically fixed pinned layer 208 is formedadjacent to an upper surface of the second conductive trace 204 b. Invarious embodiments, the pinned layer 208 may comprise a magnetic-basedmaterial, such as a layer of NiFeCo, NiFe, CoFe, Cu, Co, Ni, Fe, or Ta.It should be appreciated that the pinned layer 208 can varydimensionally, including length, width, height, and thickness, dependingon the implementation and desirable electrical characteristics withoutdeparting from the scope of the present teachings. GMR stack layers,including the pinned layer 208, are formed in a manner generally knownin the art by deposition techniques such as sputter-deposition, physicalvapor deposition, or ion-beam deposition. In one aspect, the pinnedlayer 208 is magnetized in a first fixed direction and functions as afirst reference point for the net directional magnetization vectors ofthe GMR stacked structure 201. The first fixed direction is relative tothe collective rotational spin of the electrons within the layeredmaterial. Positioning the pinned layer 208 significantly adjacent to thesecond conductive trace surface 204 b provides a direct conductive linkto the lower portion of the GMR stacked structure 201 as will bedescribed in greater detail herein below.

In one embodiment, the spacer layer 210 is formed on an upper surface ofthe pinned layer 208. In addition, the spacer layer 210 may comprise alayer of conductive material, such as copper. It should be appreciatedthat the spacer layer 210 can vary dimensionally, including length,width, height, and thickness, depending on the implementation anddesirable electrical characteristics without departing from the scope ofthe present teachings. In one aspect, the spacer layer 210 is formedusing fabrication techniques, such as vacuum evaporation,sputter-deposition, or chemical vapor deposition (CVD) in a manner knownin the art. In addition, the spacer layer 210 functions as a conduit forexcited electrons to flow through with low traversal resistance.

In another embodiment, the spacer layer 210 comprises a tunnelingdielectric layer, wherein the tunneling dielectric layer comprises alayer of Al₂O₃ that is approximately 10 to 15 Angstroms thick. It shouldbe appreciated that the spacer layer 210 can vary dimensionally,including length, width, height, and thickness, depending on theimplementation and desirable electrical characteristics withoutdeparting from the scope of the present teachings. Additionally, variousfabrication techniques utilized for producing the tunneling dielectriclayer 112 include, first, depositing a conductive aluminum layer in amanner well known in the art. Then, oxidation of the aluminum layer isachieved by one of several different methods: plasma oxidation,oxidation by air, and ion-beam oxidation, wherein all are derived in amanner well known in the art. In this embodiment, the tunnelingdielectric layer functions as a conduit for excited electrons to flowthrough without causing dielectric breakdown at low voltages.

In one embodiment, the magnetically programmable soft layer 212 isformed on an upper surface of the tunneling dielectric layer 112. Invarious embodiments, the magnetically programmable soft layer 114comprises a magnetic material, such as a layer of NiFeCo, NiFe, CoFe,Cu, Co, Ni, Fe, or Ta. It should be appreciated that the soft layer 212can vary dimensionally, including length, width, height, and thickness,depending on the implementation and desirable electrical characteristicswithout departing from the scope of the present teachings. In oneaspect, the magnetically programmable soft layer 212 is magnetized ineither a first fixed direction, that is parallel to the magnetizationdirection of the magnetically fixed pinned layer 208, or a seconddirection, that is anti-parallel to the to the magnetization directionof the magnetically fixed pinned layer 208. The magneticallyprogrammable soft layer 212 provides a second reference point for thenet directional magnetization vectors of the GMR stacked structure 201.It should be appreciated that the GMR stacked structure 201 may comprisemulti-layers of NiFeCo, NiFe, CoFe, Cu, Co, Ni, Fe, Ta, or anycombination thereof without departing from the scope of the presentteachings.

In one embodiment, attached adjacent to the upper surface of soft layer212 is a third conductive trace 204 c. In this embodiment, the thirdconductive trace 204 c is positioned substantially parallel to thesecond conductive trace 204 b so as to prevent switching of themagnetically programmable soft layer 212. The third conductive trace 204c functions as an upper conductive contact for the GMR stacked structure201, wherein the GMR structure 201 may be interconnected to othercircuit elements in a manner as will be described in greater detailherein below. In addition, a second insulation layer 206 b is formedadjacent to the upper surface of the third conductive trace 204 c in amanner and of a material as previously described with reference to thefirst insulation layer 206 a. It should be appreciated that the GMRstacked structure 201 may comprise additional layers as will bedescribed in FIGS. 2C, 2D without departing from the scope of thepresent teachings.

In one embodiment, a fourth conductive trace 204 d is formed adjacent tothe upper surface of the second insulation layer 206 b. The fourthconductive trace 204 d may be positioned substantially perpendicular tothe first conductive trace 204 a. In addition, the fourth conductivetrace 204 d functions as a second reference point for programming thenet magnetization vectors of the magnetically programmable soft layer212. In one aspect, the second conductive trace 204 d provides a secondmagnetic field in a second direction that is substantially perpendicularto the first direction of the first magnetic field generated by thefirst conductive trace 204 a.

In one embodiment, the MRC 200 in FIG. 2A may be connected to thecircuit 100 in a manner as follows. The source terminal of the firsttransistor 104 remains connected to the voltage source (Vs) 110, and thedrain terminal of the first transistor 104 may be connected to the thirdconductive trace 204 c of the MRC 200. In addition, the secondconductive trace 204 b may be connected to the drain terminal of thesecond transistor 106, and the source terminal of the second transistor106 remains connected to the common ground terminal 112. Moreover, theinput terminal 114 of the inverter circuit 100 remains connected to thegate terminals of the first and second transistors 104, 106, and theoutput terminal 116 of the inverter circuit 100 may be connected to thedrain terminal of the first transistor 104 and the third conductivetrace 204 c of the MRC 200. In this embodiment, the first and fourthconductive traces 204 a, 204 d, are used to program the netmagnetization vectors of the soft layer 212. The second and thirdconductive traces 204 b, 204 c are used to electrically connect the MRC200 to a circuit 100 in a manner as described. It should be appreciatedthat the MRC 200 may be similarly integrated into the circuitconfigurations as described in FIGS. 1B, 1C, 1D.

FIGS. 2A, 2B illustrate one embodiment a functional MRC cell that may beutilized in the various inverter circuit configurations in FIGS. 1A, 1B,1C, 1D. The operation of the MRC 200 is controlled by magneto-transport,wherein the magneto-resistance depends on the net magnetization vectorof the GMR stacked structure 201 or, in other words, the spinorientation of the soft layer 212 with respect to the pinned layer 208in the GMR stacked structure 201. In one aspect, the spintronic effectutilizes the spin-polarization of electrons to generate a variableresistance differential across the GMR stacked structure 201 such that aparallel spin orientation between the pinned layer 208 and the softlayer 212 results in a relatively low resistance differential across theGMR stacked structure 201, or, conversely, an anti-parallel spinorientation between the pinned layer 208 and the soft layer 212 resultsin a relatively high resistance differential across the GMR stackedstructure 201. In one embodiment, the means for writing to the MRC 200is by direct polarized spin injection. Alternatively, another means forwriting to the MRC 200 is by switching the net magnetization vector inthe magnetically programmable soft layer 212 with two orthogonallyapplied magnetic fields in a manner such that the spin polarizationswitching may be induced by one or more proximate conductors, such asconductive traces 204 a, 204 d.

For example, a first current applied to the first conductive trace 204 ainduces a first magnetic field in a first direction. A second currentsimultaneously applied to the fourth conductive trace 204 d induces asecond magnetic field in a second direction that is substantiallyperpendicular to the first direction of the first magnetic field. Thesimultaneous generation of two orthogonal magnetic fields changes thespin orientation of the net magnetization vector within the soft layer212 from a parallel spin orientation to an anti-parallel spinorientation. To change from an anti-parallel spin orientation to aparallel spin orientation, the applied currents may be reversed and flowin the opposite direction relative to the initial current flowdirection. It should be appreciated that this example is disclosed forillustrative purposes and the directions of applied currents and theinduced magnetic fields may be altered without departing from the scopeof the present teachings.

FIG. 2C illustrates a cross-sectional view of another embodiment of amagneto-resistive contact (MRC) 220. FIG. 2D illustrates a perspectiveview of the MRC 220 in FIG. 2C, wherein like numerals within FIGS. 2A-2Dcorrespond to like parts throughout. The MRC 220 comprises similar scopeand functionality of the MRC 200 in FIGS. 2A, 2B with additional layers224, 226 a, 226 b. The MRC 220 is formed on an upper surface of thesemiconductor based substrate 202 in a manner as previously describedwith reference to the MRC 200 in FIGS. 2A, 2B. In addition, the MRC 200comprises the plurality of conductive traces 204 a, 204 b, 204 c, 204 d,the plurality of insulation layers 206 a, 206 b, and a second GMRstacked structure 222 including the magnetically fixed pinned layer 208,the spacer layer 210, the magnetically programmable soft layer 212, athird insulation layer 226 a, a fourth insulation layer 226 b, and abase layer 224. The additional insulation layers 226 a, 226 b may beformed of a similar material and in a similar manner as previouslydescribed with reference to the insulation layers 206 a, 206 b in FIGS.2A, 2B. Furthermore, the base layer 224 may comprise Ta or Cu and beformed in manner using generally known deposition techniques.

In this embodiment, the second GMR stacked structure 222 allows readingthe magnetization state between the two ferromagnetic layers 208, 212.Writing (switching the top layer as shown) may be accomplished by thespintronic effect (spin injection-directly-transferring spin informationin electrons that are injected into the electrons that reside in themagnetization of the ferromagnet). Additionally, switching of the toplayer, as shown in FIG. 2C, 2D for example, may be performed or aided bya conductor placed in proximity, such as conductors 204 a, 204 d. Itshould be appreciated that the polarity structure that is used as aninput to create spin-polarized electrons may comprise magnetic material,such as Co, Fe, or Ni, or an alloy thereof.

FIG. 3 illustrates one embodiment of an MRC array 300. The MRC array 300comprises a plurality of MRC devices 302, wherein each MRC device 302includes and upper electrode 304 and a lower electrode. The upperelectrode 304 is formed adjacent to an upper portion of the MRC device302, and the lower electrode 306 is formed adjacent to a lower portionof the MRC device 302. In one aspect, the plurality of MRC devices 302are daisy-chained in a manner so as to conductively interlink the lowerelectrode 306 of one MRC device 302 to the upper electrode of anotherMRC device 302. The MRC array 300 is a series of one or moreconductively interconnected MRC devices 302, which may be utilized toincrease the resistance differential between multiple transistors orother circuit elements as needed and if substrate area is available orpreviously allocated for this purpose. For example, if it is determinedthat a larger and/or smaller resistance differential is needed in acircuit, such as the inverter circuit 100 in FIG. 1A, then a pluralityof MRC devices 302 may be conductively interlinked and positionedbetween the various circuit elements to increase and/or decrease theresistance differential between the various circuit elements.

Advantageously, integrated GMR-based memory and logic structures, suchas the above-mentioned magneto-resistive contacts, providenon-volatility to semiconductor-based memory and logic structures, suchas SRAM. In one aspect, the magneto-resistive contact demonstratesintegrated latch memory, wherein the source and drain contacts oftransistors are electrically interconnected with GMR structures toprovide a fully integrated advanced memory cell. Furthermore, anotheradvantage is spin current induced magnetic switching, wherein the pointcontact CPP structures may be switched by injecting or passing currentsfrom magnetically fixed pinned layers to magnetically programmable softlayers for the purpose of altering the spin polarization of the softlayer relative to the fixed polarized spin of the pinned layer. In oneaspect, the proposed switching scheme is significantly selective andhighly efficient over conventional switching schemes.

Although the following description exemplifies one embodiment of thepresent invention, it should be understood that various omissions,substitutions, and changes in the form of the detail of the apparatus,system, and/or method as illustrated as well as the uses thereof, may bemade by those skilled in the art, without departing from the spirit ofthe present invention. Consequently, the scope of the present inventionshould not be limited to the disclosed embodiments, but should bedefined by the appended claims.

What is claimed is:
 1. An integrated circuit, comprising: a firsttransistor; a second transistor; and a magneto-resistive component (MRC)integrated with at least one of the first transistor or the secondtransistor, wherein the MRC is coupled in series between the first andsecond transistors; wherein the MRC comprises a first MRC, and furthercomprising a second MRC coupled between the first transistor and avoltage source.
 2. An integrated circuit, comprising: a firsttransistor; a second transistor; a proximate conductor; and amagneto-resistive component (MRC) integrated with at least one of thefirst transistor or the second transistor, wherein the MRC is coupled inseries between the first and second transistors.
 3. An integratedcircuit, comprising: a first transistor; a second transistor; and amagneto-resistive component (MRC) integrated with at least one of thefirst transistor or the second transistor; wherein the MRC comprises afirst MRC, and further comprising a second MRC, wherein the first MRC iscoupled between the first transistor and a first voltage source, thesecond MRC is coupled between the second transistor and a second voltagesource, and the first and second transistors are coupled in series. 4.The integrated circuit of claim 3, wherein the MRC can be selectivelyprogrammed to a state of high resistance or to a state of low resistancelower than the state of high resistance.
 5. The integrated circuit ofclaim 3, wherein the MRC comprises a GMR stacked structure.
 6. Anintegrated circuit, comprising: a first transistor; a second transistor;and a magneto-resistive component (MRC) integrated with at least one ofthe first transistor or the second transistor, wherein the MRC comprisesa plurality of MRC devices.
 7. An integrated circuit, comprising: afirst transistor; a second transistor; and a magneto-resistive component(MRC) integrated with at least one of the first transistor or the secondtransistor, wherein the MRC is directly connected to the at least one ofthe transistors.
 8. An integrated circuit, comprising: a firsttransistor; a second transistor; and a magneto-resistive component (MRC)integrated with at least one of the first transistor or the secondtransistor, wherein the MRC comprises a contact that is integrated witha magnetic element.
 9. An integrated circuit, comprising: a firsttransistor; a second transistor complementary to the first transistor,wherein the second transistor is coupled in series with the firsttransistor; one or more magneto-resistive components (MRCs) arranged inseries with the first transistor and the second transistor, the one ormore MRCs comprising at least a first MRC and a second MRC, wherein thefirst MRC is coupled between a first voltage source and the firsttransistor, wherein the second MRC is coupled between the secondtransistor and a second voltage source; wherein the one or more MRCs areselectively programmable to a first state of resistance or to a secondstate of resistance, wherein the first state has higher resistance thanthe second state.
 10. The integrated circuit of claim 9, furthercomprising a latch circuit, wherein the first transistor and the secondtransistor comprise at least a portion of the latch circuit.
 11. Theintegrated circuit of claim 10, wherein the latch circuit comprises aCMOS circuit.
 12. The integrated circuit of claim 9, wherein the one ormore MRCs each comprises a giant magneto-resistance device.
 13. Theintegrated circuit of claim 9, further comprising a proximate conductor,wherein the one or more MRCs are configured to be programmed via amagnetic field generated by the proximate conductor.
 14. A method ofproviding non-volatile memory, the method comprising: programming afirst state of resistance or a second state of resistance in one or moremagneto-resistive components (MRCs), wherein the first state has higherresistance than the second state; powering up a circuit comprising afirst transistor, a second transistor, and the one or more MRCs, whereinthe one or more MRCs are arranged in series with the first transistorand the second transistor; and using at least one of the firsttransistor or the second transistor to sense a programmed state of theone or more MRCs upon power up such that a logic state associated withthe programmed state is provided as an output of the circuit.
 15. Themethod of claim 14, further comprising passing a current through aproximate conductor to program the first state or the second state ofthe one or more MRCs.
 16. The method of claim 14, wherein the circuitfurther comprises a latch.
 17. The method of claim 14, wherein the oneor more MRCs each comprises a giant magneto-resistance (GMR) device,further comprising storing the programmed first or second state in oneor more layers of the GMR device.
 18. The method of claim 14, furthercomprising injecting current to induce spin polarization to switch astate of the first or second state.